Invention Grant
- Patent Title: Double guard ring edge termination for silicon carbide devices
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Application No.: US12037211Application Date: 2008-02-26
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Publication No.: US09640609B2Publication Date: 2017-05-02
- Inventor: Qingchun Zhang , Charlotte Jonas , Anant K. Agarwal
- Applicant: Qingchun Zhang , Charlotte Jonas , Anant K. Agarwal
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L31/0312
- IPC: H01L31/0312 ; H01L29/06 ; H01L29/16 ; H01L29/872
Abstract:
Edge termination structures for semiconductor devices are provided including a plurality of spaced apart concentric floating guard rings in a semiconductor layer that at least partially surround a semiconductor junction. The spaced apart concentric floating guard rings have a highly doped portion and a lightly doped portion. Related methods of fabricating devices are also provided herein.
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