Invention Grant
- Patent Title: Memory cell with independently-sized elements
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Application No.: US14867185Application Date: 2015-09-28
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Publication No.: US09640588B2Publication Date: 2017-05-02
- Inventor: Samuele Sciarrillo , Marcello Ravasio
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00 ; H01L27/22
Abstract:
Memory cell architectures and methods of forming the same are provided. An example memory cell can include a switch element and a memory element formed in series with the switch element. A smallest lateral dimension of the switch element is different than a smallest lateral dimension of the memory element.
Public/Granted literature
- US20160020256A1 MEMORY CELL WITH INDEPENDENTLY-SIZED ELEMENTS Public/Granted day:2016-01-21
Information query
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