Invention Grant
- Patent Title: Semiconductor device having three-dimensional structure and method of manufacturing the same
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Application No.: US15264349Application Date: 2016-09-13
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Publication No.: US09640550B2Publication Date: 2017-05-02
- Inventor: Ki Hong Lee , Seung Ho Pyi , Jin Ho Bin
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0045557 20140416
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L27/11582 ; H01L27/11565 ; H01L27/11578 ; H01L27/11553 ; H01L27/11556 ; H01L21/768 ; H01L27/11573 ; H01L27/11575
Abstract:
A semiconductor device includes a semiconductor pattern; conductive layers each including a first portion through which the semiconductor pattern passes and a second portion having a thickness greater than the first portion, wherein the first portion of each conductive layer includes a first barrier pattern surrounding the semiconductor pattern and a material pattern, which is formed in the first barrier pattern and has an etch selectivity with respect to the first barrier pattern, and the second portion of each conductive layer includes a conductive pattern; and contact plugs connected to the second portion of each of the conductive layers.
Public/Granted literature
- US20170005109A1 SEMICONDUCTOR DEVICE HAVING THREE-DIMENSIONAL STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2017-01-05
Information query
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