Invention Grant
- Patent Title: Power amplifier package and method thereof
-
Application No.: US14600555Application Date: 2015-01-20
-
Publication No.: US09640457B2Publication Date: 2017-05-02
- Inventor: Chung-Hao Tsai , Jeng-Shien Hsieh , Chuei-Tang Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., INTELLECTUAL PROPERTY ATTORNEYS
- Agent Anthony King
- Main IPC: H03F3/195
- IPC: H03F3/195 ; H01L23/31 ; H01L23/00 ; H01L23/367 ; H01L25/07 ; H01L23/373

Abstract:
A device is provided, which includes a wiring structure including a first surface and a second surface opposite the first surface. The device also includes a first semiconductor die on the first surface of the wiring structure where the first semiconductor die includes first power amplifier unit. The device further includes a second semiconductor die on the first surface of the wiring structure where the second semiconductor has a second power amplifier unit and is spaced apart from the first semiconductor die. In addition, the device includes a first input port at the second surface of the wiring structure, and a first conductor in the wiring structure to electrically connect the first input port to the first semiconductor die and the second semiconductor die.
Public/Granted literature
- US20160211214A1 POWER AMPLIFIER PACKAGE AND METHOD THEREOF Public/Granted day:2016-07-21
Information query
IPC分类: