Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14933449Application Date: 2015-11-05
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Publication No.: US09640454B2Publication Date: 2017-05-02
- Inventor: Norihiro Nashida , Yoko Nakamura
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agent Manabu Kanesaka
- Priority: JP2013-118495 20130605
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L25/07 ; H01L25/18 ; H01L23/00 ; H01L23/08

Abstract:
A semiconductor device includes an insulating substrate having a circuit plate on a principal surface thereof; a semiconductor element fixed to the circuit plate; an external terminal having one end fixed to the circuit plate; and a printed circuit board facing the principal surface of the insulating substrate, and having a through-hole for passing through the external terminal. A rigidity of a peripheral region of the through-hole is lower than a rigidity of other regions.
Public/Granted literature
- US20160079133A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-03-17
Information query
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