Invention Grant
- Patent Title: CMOS fin integration on SOI substrate
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Application No.: US15058865Application Date: 2016-03-02
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Publication No.: US09640442B2Publication Date: 2017-05-02
- Inventor: Effendi Leobandung , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8238 ; H01L21/84 ; H01L21/02
Abstract:
A method for complementary metal oxide semiconductor (CMOS) fin integration includes recessing a fin structure buried in a dielectric fill to form a trench in the dielectric fill having a fin portion remaining at a bottom thereof. A new fin is epitaxially grown in the trench from the fin portion. The new fin included SiGe.
Public/Granted literature
- US20170011969A1 CMOS FIN INTEGRATION ON SOI SUBSTRATE Public/Granted day:2017-01-12
Information query
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