Invention Grant
- Patent Title: Semiconductor device, related manufacturing method, and related electronic device
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Application No.: US14690044Application Date: 2015-04-17
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Publication No.: US09640439B2Publication Date: 2017-05-02
- Inventor: Jianhua Xu
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN
- Agency: Innovation Counsel LLP
- Priority: CN201410325958 20140709
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/8238 ; H01L29/66 ; H01L21/02 ; H01L21/28 ; H01L21/285 ; H01L21/768 ; H01L29/49 ; H01L21/66
Abstract:
A method for manufacturing a semiconductor device may include the following steps: providing a semiconductor substrate structure; providing a substrate-connecting barrier layer on the semiconductor substrate structure; performing one or more iterations of a composite-layer formation process to provide a gate-connecting barrier layer, wherein the composite-layer formation process comprises: applying a silicon-containing compound set to an outmost existing barrier layer to form an amorphous silicon layer, and forming an overlying barrier layer on the amorphous silicon layer, wherein the substrate-connecting barrier layer is the outmost existing barrier layer for a first iteration of the one or more iterations, and wherein the gate-connecting barrier layer is the overlying barrier layer resulted from a last iteration of the one or more iterations; and providing a conductive gate layer on the gate-connecting barrier layer.
Public/Granted literature
- US20160013289A1 SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE Public/Granted day:2016-01-14
Information query
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