Invention Grant
- Patent Title: Direct and pre-patterned synthesis of two-dimensional heterostructures
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Application No.: US15190806Application Date: 2016-06-23
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Publication No.: US09640391B2Publication Date: 2017-05-02
- Inventor: Eui-Hyeok Yang , Kyung Nam Kang
- Applicant: The Trustees of the Stevens Institute of Technology
- Applicant Address: US NJ Hoboken
- Assignee: THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY
- Current Assignee: THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY
- Current Assignee Address: US NJ Hoboken
- Agency: Greenberg Traurig, LLP
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01L21/02 ; H01L21/762 ; H01L21/3065 ; H01L21/308 ; H01L21/033
Abstract:
A method for growing a transition metal dichalcogenide on a substrate, the method including providing a growth substrate having a first side and a second side opposite the first side; providing a source substrate having a first side and a second side opposite the first side; depositing a transition metal oxide on at least a portion of the first side of the source substrate; combining the growth substrate with the source substrate such that the first side of the growth substrate contacts the transition metal oxide, the combining producing a substrate stack; exposing the substrate stack to a chalcogenide gas, whereby the transition metal oxide reacts with the chalcogenide gas to produce a layer of a transition metal dichalcogenide on at least a portion of the first side of the growth substrate; and removing the source substrate from the growth substrate having the layer of the transition metal dichalcogenide thereon.
Public/Granted literature
- US20160379822A1 DIRECT AND PRE-PATTERNED SYNTHESIS OF TWO-DIMENSIONAL HETEROSTRUCTURES Public/Granted day:2016-12-29
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