Invention Grant
- Patent Title: Variable bit encoding per NAND flash cell to improve device endurance and extend life of flash-based storage devices
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Application No.: US14929166Application Date: 2015-10-30
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Publication No.: US09639282B2Publication Date: 2017-05-02
- Inventor: Navneeth Kankani , Linh Tien Truong
- Applicant: SanDisk Enterprise IP LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: G06F12/10
- IPC: G06F12/10 ; G06F3/06

Abstract:
Systems, methods, and/or devices are used to implement variable bit encoding to improve device endurance and extend life of storage devices. In some embodiments, the method includes detecting a trigger condition with respect to one or more non-volatile memory portions (e.g., portions configured to store data encoded in a first encoding format) of a plurality of non-volatile memory portions of a storage device. In accordance with detecting the trigger condition, the method includes: determining a current and an estimated endurance metric for the plurality of non-volatile memory portions (e.g., corresponding to estimated endurance after reconfiguration of the one or more portions to store data encoded in a second encoding format), and in accordance with a determination that reconfiguration criteria are satisfied (e.g., the estimated endurance metric comprises an improvement over the current endurance metric), reconfiguring the one or more portions to store data encoded in the second encoding format.
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