Invention Grant
- Patent Title: Method of forming resist pattern
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Application No.: US14872568Application Date: 2015-10-01
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Publication No.: US09639002B2Publication Date: 2017-05-02
- Inventor: Masatoshi Arai , Yoshitaka Komuro , Daichi Takaki
- Applicant: TOKYO OHKA KOGYO CO., LTD.
- Applicant Address: JP Kawasaki-Shi
- Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee: TOKYO OHKA KOGYO CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2014-204053 20141002
- Main IPC: G03F7/32
- IPC: G03F7/32 ; G03F7/039

Abstract:
A method of forming a resist pattern including forming a resist film on a substrate using a resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of the acid; exposing the resist film; and patterning the exposed resist film by negative-tone development using a developing solution containing an organic solvent, to form a resist pattern. The resist composition includes a polymeric compound having at least two kinds of specific structural units.
Public/Granted literature
- US20160116843A1 METHOD OF FORMING RESIST PATTERN Public/Granted day:2016-04-28
Information query
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