According to an exemplary embodiment, a method of forming a MEMS device is provided. The method includes the following operations: providing a substrate; forming a first layer formed of titanium nitride over the substrate; and forming a second layer formed of titanium over the first layer. According to an exemplary embodiment, a MEMS device is provided. The device includes: a substrate; a first layer formed of titanium nitride over the substrate; and a second layer formed of titanium over the first layer. According to an exemplary embodiment, a getter structure is provided. The structure includes: a first layer formed of titanium nitride over a substrate; and a second layer formed of titanium over the first layer.