Invention Grant
US09590621B2 Gate drive circuit for a semiconductor switch 有权
半导体开关的栅极驱动电路

  • Patent Title: Gate drive circuit for a semiconductor switch
  • Patent Title (中): 半导体开关的栅极驱动电路
  • Application No.: US14777163
    Application Date: 2014-03-14
  • Publication No.: US09590621B2
    Publication Date: 2017-03-07
  • Inventor: George Young
  • Applicant: Eisergy Limited
  • Applicant Address: IE Dublin
  • Assignee: Icergi Limited
  • Current Assignee: Icergi Limited
  • Current Assignee Address: IE Dublin
  • Agency: Lemaire Patent Law Firm, P.L.L.C.
  • Agent Charles A. Lemaire; Jonathan M. Rixen
  • Priority: GB1304723.8 20130315
  • International Application: PCT/EP2014/055215 WO 20140314
  • International Announcement: WO2014/140352 WO 20140918
  • Main IPC: H03K17/687
  • IPC: H03K17/687 H03K17/0412 H03K17/691
Gate drive circuit for a semiconductor switch
Abstract:
The present application is directed to drive arrangement for semiconductor switches and in particular to a method of driving the gate of a switch with pulses corresponding to turn-on and turn-off commands through separate turn-on and turn-off transformers. The application provides a fail safe reset feature, a more efficient turn-on circuit and an energy recovery circuit for recovering energy from the gate upon turn-off. The application also provides a novel arrangement for assembling multiple pulse transformers on a circuit board.
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