Invention Grant
- Patent Title: Gate drive circuit for a semiconductor switch
- Patent Title (中): 半导体开关的栅极驱动电路
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Application No.: US14777163Application Date: 2014-03-14
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Publication No.: US09590621B2Publication Date: 2017-03-07
- Inventor: George Young
- Applicant: Eisergy Limited
- Applicant Address: IE Dublin
- Assignee: Icergi Limited
- Current Assignee: Icergi Limited
- Current Assignee Address: IE Dublin
- Agency: Lemaire Patent Law Firm, P.L.L.C.
- Agent Charles A. Lemaire; Jonathan M. Rixen
- Priority: GB1304723.8 20130315
- International Application: PCT/EP2014/055215 WO 20140314
- International Announcement: WO2014/140352 WO 20140918
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H03K17/0412 ; H03K17/691

Abstract:
The present application is directed to drive arrangement for semiconductor switches and in particular to a method of driving the gate of a switch with pulses corresponding to turn-on and turn-off commands through separate turn-on and turn-off transformers. The application provides a fail safe reset feature, a more efficient turn-on circuit and an energy recovery circuit for recovering energy from the gate upon turn-off. The application also provides a novel arrangement for assembling multiple pulse transformers on a circuit board.
Public/Granted literature
- US20160036435A1 A GATE DRIVE CIRCUIT FOR A SEMICONDUCTOR SWITCH Public/Granted day:2016-02-04
Information query
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