Invention Grant
- Patent Title: Magnetic memory and method for manufacturing the same
- Patent Title (中): 磁记忆及其制造方法
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Application No.: US14645226Application Date: 2015-03-11
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Publication No.: US09590173B2Publication Date: 2017-03-07
- Inventor: Masayoshi Iwayama
- Applicant: Masayoshi Iwayama
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/82 ; H01L43/10 ; H01L43/08 ; H01L43/12 ; H01L27/22

Abstract:
According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes a substrate and an underlying layer provided on the substrate. The underlying layer includes a first underlying layer and a second underlying layer surrounding the first underlying layer. The first and second underlying layers contain a metal of a same type. The first underlying layer includes a lower part which is greater than the upper part in width. The magnetic memory further includes a magnetoresistive element provided on the underlying layer.
Public/Granted literature
- US20160072051A1 MAGNETIC MEMORY AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2016-03-10
Information query
IPC分类: