Efficient dual metal contact formation for a semiconductor device

Invention Grant

US09590157B2 Efficient dual metal contact formation for a semiconductor device 有权

Title translation: 半导体器件的高效双金属接触形成

Please log in to see more content

Patent Title: Efficient dual metal contact formation for a semiconductor device
Patent Title (中): 半导体器件的高效双金属接触形成
Application No.: US14730500

Application Date: 2015-06-04
Publication No.: US09590157B2

Publication Date: 2017-03-07
Inventor: Johnny Cai Tang , Christopher Flynn
Applicant: THE SILANNA GROUP PTY LTD.
Applicant Address: AU Eight Mile Plains
Assignee: The Silanna Group Pty Ltd
Current Assignee: The Silanna Group Pty Ltd
Current Assignee Address: AU Eight Mile Plains
Agency: The Mueller Law Office, P.C.
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L33/62

Efficient dual metal contact formation for a semiconductor device

Abstract:

A method of forming contacts to an n-type layer and a p-type layer of a semiconductor device includes depositing a dielectric layer on the n-type layer and the p-type layer. A pattern is formed in the dielectric layer, the pattern having a plurality of metal contact patterns for the semiconductor device. A first metal layer is deposited into the plurality of metal contact patterns, and a second metal layer is deposited directly on the first metal layer. External contacts for the semiconductor device are formed, where the external contacts include the second metal layer.

Abstract(Chinese):

形成与n型层和半导体器件的p型层的接触的方法包括在n型层和p型层上沉积介电层。在电介质层中形成图案，该图案具有用于半导体器件的多个金属接触图案。第一金属层被沉积到多个金属接触图案中，并且第二金属层直接沉积在第一金属层上。形成半导体器件的外部触点，其中外部触点包括第二金属层。

Public/Granted literature

US20160359094A1 EFFICIENT DUAL METAL CONTACT FORMATION FOR A SEMICONDUCTOR DEVICE Public/Granted day:2016-12-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）