Invention Grant
- Patent Title: Graded heterojunction nanowire device
- Patent Title (中): 渐变异质结纳米线器件
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Application No.: US14554584Application Date: 2014-11-26
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Publication No.: US09590084B2Publication Date: 2017-03-07
- Inventor: Richard Kenneth Oxland
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/775 ; H01L29/161 ; H01L29/201 ; H01L29/06 ; H01L29/45
Abstract:
A device includes a source region, a drain region, and a semiconductor channel connecting the source region to the drain region. The semiconductor channel includes a source-side channel portion adjoining the source region, wherein the source-side channel portion has a first bandgap, and a drain-side channel portion adjoining the drain region. The drain-side channel portion has a second bandgap different from the first bandgap.
Public/Granted literature
- US20160149001A1 GRADED HETEROJUNCTION NANOWIRE DEVICE Public/Granted day:2016-05-26
Information query
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