Invention Grant
- Patent Title: ITC-IGBT and manufacturing method therefor
- Patent Title (中): ITC-IGBT及其制造方法
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Application No.: US14648698Application Date: 2012-12-06
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Publication No.: US09590083B2Publication Date: 2017-03-07
- Inventor: Zhenxing Wu , Yangjun Zhu , Xiaoli Tian , Shuojin Lu
- Applicant: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES , SHANGHAI LIANXING ELECTRONICS CO., LTD , JIANGSU CAS-IGBT TECHNOLOGY CO., LTD
- Applicant Address: CN Beijing CN Shanghai CN Jiangsu
- Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES,SHANGHAI LIANXING ELECTRONICS CO., LTD,JIANGSU CAS-IGBT TECHNOLOGY CO., LTD
- Current Assignee: INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES,SHANGHAI LIANXING ELECTRONICS CO., LTD,JIANGSU CAS-IGBT TECHNOLOGY CO., LTD
- Current Assignee Address: CN Beijing CN Shanghai CN Jiangsu
- Agency: Goodwin Procter LLP
- International Application: PCT/CN2012/086001 WO 20121206
- International Announcement: WO2014/086014 WO 20140612
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739 ; H01L29/15 ; H01L21/265 ; H01L21/306 ; H01L21/324 ; H01L29/08 ; H01L29/36 ; H01L21/02
Abstract:
An ITC-IGBT and a manufacturing method therefor. The method comprises: providing a heavily doped substrate, forming a GexSi1-x/Si multi-quantum well strained super lattice layer on the surface of the heavily doped substrate, and forming a lightly doped layer on the surface of the GexSi1-x/Si multi-quantum well strained super lattice layer. The GexSi1-x/Si multi-quantum well strained super lattice layer is formed on the surface of the heavily doped substrate through one step, simplifying the production process of the ITC-IGBT.
Public/Granted literature
- US20150311327A1 ITC-IGBT AND MANUFACTURING METHOD THEREFOR Public/Granted day:2015-10-29
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