Invention Grant
US09590065B2 Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer
有权
具有金属栅极结构的半导体器件包括功能金属层和工作功能调整层
- Patent Title: Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer
- Patent Title (中): 具有金属栅极结构的半导体器件包括功能金属层和工作功能调整层
-
Application No.: US14096108Application Date: 2013-12-04
-
Publication No.: US09590065B2Publication Date: 2017-03-07
- Inventor: Da-Yuan Lee , Kuan-Ting Liu , Hung-Chin Chung , Hsien-Ming Lee , Weng Chang , Syun-Ming Jang , Wei-Jen Lo
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/66 ; H01L21/28 ; H01L29/51 ; H01L29/78 ; H01L21/8238
Abstract:
The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function meta layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.
Public/Granted literature
- US20150155365A1 SEMICONDUCTOR DEVICE WITH PROFILED WORK-FUNCTION METAL GATE ELECTRODE AND METHOD OF MAKING Public/Granted day:2015-06-04
Information query
IPC分类:
