Invention Grant
- Patent Title: Semiconductor device with voltage resistant structure
- Patent Title (中): 具有耐电压结构的半导体器件
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Application No.: US14771457Application Date: 2014-03-04
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Publication No.: US09590061B2Publication Date: 2017-03-07
- Inventor: Yuki Nakano , Ryota Nakamura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2013-043406 20130305
- International Application: PCT/JP2014/055520 WO 20140304
- International Announcement: WO2014/136802 WO 20140912
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L29/423 ; H01L29/40 ; H01L29/49 ; H01L29/78 ; H01L29/06 ; H01L29/16 ; H01L29/20 ; H01L29/36 ; H01L29/51 ; H01L29/417 ; H01L29/10
Abstract:
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion, and a gate electrode buried in the gate trench via a gate insulating film, forming a channel at a portion lateral to the gate trench at ON-time, the outer peripheral portion has a semiconductor surface disposed at a depth position equal to or deeper than a depth of the gate trench, and the semiconductor device further includes a voltage resistant structure having a semiconductor region of a second conductivity type formed in the semiconductor surface of the outer peripheral portion.
Public/Granted literature
- US20160005827A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-01-07
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