Invention Grant
- Patent Title: Semiconductor composite film with heterojunction and manufacturing method thereof
- Patent Title (中): 具有异质结的半导体复合膜及其制造方法
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Application No.: US14966818Application Date: 2015-12-11
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Publication No.: US09590049B2Publication Date: 2017-03-07
- Inventor: Hung-Der Su , Chien-Wei Chiu , Tsung-Yi Huang
- Applicant: Hung-Der Su , Chien-Wei Chiu , Tsung-Yi Huang
- Applicant Address: TW Zhubei, Hsinchu
- Assignee: Richtek Technology Corporation
- Current Assignee: Richtek Technology Corporation
- Current Assignee Address: TW Zhubei, Hsinchu
- Agency: Tung & Associates
- Priority: TW101145964A 20121207
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/205 ; H01L29/78 ; H01L21/02 ; H01L21/306 ; H01L29/20 ; H01L29/12
Abstract:
The present invention discloses a semiconductor composite film with a heterojunction and a manufacturing method thereof. The semiconductor composite film includes: a semiconductor substrate; and a semiconductor epitaxial layer, which is formed on the semiconductor substrate, and it has a first surface and a second surface opposite to each other, wherein the heterojunction is formed between the first surface and the semiconductor substrate, and wherein the semiconductor epitaxial layer further includes at least one recess, which is formed by etching the semiconductor epitaxial layer from the second surface toward the first surface. The recess is for mitigating a strain in the semiconductor composite film.
Public/Granted literature
- US20160099320A1 SEMICONDUCTOR COMPOSITE FILM WITH HETEROJUNCTION AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-04-07
Information query
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