Invention Grant
- Patent Title: Semiconductor structure and method for forming the same
- Patent Title (中): 半导体结构及其形成方法
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Application No.: US14136113Application Date: 2013-12-20
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Publication No.: US09590039B2Publication Date: 2017-03-07
- Inventor: Wei-Shan Liao
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L29/735
- IPC: H01L29/735 ; H01L29/08 ; H01L29/66 ; H01L29/732 ; H01L29/06 ; H01L29/10
Abstract:
A semiconductor structure and a method for forming same are provided. The semiconductor structure includes a bipolar transistor. The bipolar transistor includes a base doped contact, an emitter doped contact, a collector doped contact, and well regions. The base doped contact, the emitter doped contact and the collector doped contact are formed in the different well regions having different dopant conditions from each other.
Public/Granted literature
- US20150179779A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2015-06-25
Information query
IPC分类:
