Invention Grant
US09590026B2 High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
有权
用于片上集成电感器的高电阻率铁基，热稳定磁性材料
- Patent Title: High resistivity iron-based, thermally stable magnetic material for on-chip integrated inductors
- Patent Title (中): 用于片上集成电感器的高电阻率铁基，热稳定磁性材料
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Application No.: US14744124Application Date: 2015-06-19
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Publication No.: US09590026B2Publication Date: 2017-03-07
- Inventor: Hariklia Deligianni , William J. Gallagher , Maurice Mason , Eugene J. O'Sullivan , Lubomyr T. Romankiw , Naigang Wang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L21/288
Abstract:
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.
Public/Granted literature
- US20160284787A1 HIGH RESISTIVITY IRON-BASED, THERMALLY STABLE MAGNETIC MATERIAL FOR ON-CHIP INTEGRATED INDUCTORS Public/Granted day:2016-09-29
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