Invention Grant
- Patent Title: Resistance variable memory cell structures and methods
- Patent Title (中): 电阻变量记忆细胞结构和方法
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Application No.: US14877006Application Date: 2015-10-07
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Publication No.: US09590014B2Publication Date: 2017-03-07
- Inventor: Sachin V. Joshi , F. Daniel Gealy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00
Abstract:
Resistance variable memory cell structures and methods are described herein. A number of embodiments include a first resistance variable memory cell comprising a number of resistance variable materials in a super-lattice structure and a second resistance variable memory cell comprising the number of resistance variable materials in a homogeneous structure.
Public/Granted literature
- US20160035791A1 RESISTANCE VARIABLE MEMORY CELL STRUCTURES AND METHODS Public/Granted day:2016-02-04
Information query
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