Invention Grant
- Patent Title: Self-aligned cross-point phase change memory-switch array
- Patent Title (中): 自对准交叉点相变存储器开关阵列
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Application No.: US14320275Application Date: 2014-06-30
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Publication No.: US09590012B2Publication Date: 2017-03-07
- Inventor: Jong Won Lee , Gianpaolo Spadini , Derchang Kau
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee: MICRON TECHNOLOGY, INC.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/24 ; H01L45/00
Abstract:
Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
Public/Granted literature
- US20150001458A1 SELF-ALIGNED CROSS-POINT PHASE CHANGE MEMORY-SWITCH ARRAY Public/Granted day:2015-01-01
Information query
IPC分类:
