Invention Grant
US09589963B2 Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor
有权
双端口半导体存储器和先进先出（FIFO）存储器，具有电浮体晶体管
- Patent Title: Dual-port semiconductor memory and first in first out (FIFO) memory having electrically floating body transistor
- Patent Title (中): 双端口半导体存储器和先进先出（FIFO）存储器，具有电浮体晶体管
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Application No.: US14563133Application Date: 2014-12-08
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Publication No.: US09589963B2Publication Date: 2017-03-07
- Inventor: Yuniarto Widjaja
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Law Office of Alan W. Cannon
- Agent Alan W. Cannon
- Main IPC: G11C11/34
- IPC: G11C11/34 ; H01L27/108 ; G11C8/10 ; G11C8/16 ; G11C11/405 ; G11C11/40 ; G11C11/403 ; H01L27/102 ; H01L27/105
Abstract:
Multi-port semiconductor memory cells including a common floating body region configured to be charged to a level indicative of a memory state of the memory cell. The multi-port semiconductor memory cells include a plurality of gates and conductive regions interfacing with said floating body region. Arrays of memory cells and method of operating said memory arrays are disclosed for making a memory device.
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