Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14430494Application Date: 2013-08-27
-
Publication No.: US09589948B2Publication Date: 2017-03-07
- Inventor: Yuichiro Kitajima
- Applicant: SEIKO INSTRUMENTS INC.
- Applicant Address: JP
- Assignee: SII SEMICONDUCTOR CORPORATION
- Current Assignee: SII SEMICONDUCTOR CORPORATION
- Current Assignee Address: JP
- Agency: Adams & Wilks
- Priority: JP2012-211306 20120925; JP2013-164397 20130807
- International Application: PCT/JP2013/072835 WO 20130827
- International Announcement: WO2014/050407 WO 20140403
- Main IPC: H02H3/00
- IPC: H02H3/00 ; H01L27/02 ; H02H11/00 ; H02J7/00 ; H02J1/00 ; H03K17/08 ; H01L27/088

Abstract:
A semiconductor device has first and second NMOS transistors and an internal circuit, all formed in the same semiconductor substrate. The first NMOS transistor has a gate connected to a power supply terminal configured for connection to a power supply, a source and a back gate connected to an internal ground node, and a drain connected to a ground terminal configured for connection to the power supply. The second NMOS transistor has a gate connected to the ground terminal, a source and a back gate connected to the internal ground node, and a drain connected to the power supply terminal. The internal circuit is configured to operate with a voltage between the power supply terminal and the internal ground node. During a normal connection state in which the power supply is normally connected to the semiconductor device, current flows through the internal circuit and the second NMOS transistor.
Public/Granted literature
- US20150287712A1 SEMICONDUCTOR DEVICE Public/Granted day:2015-10-08
Information query