Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14931772Application Date: 2015-11-03
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Publication No.: US09589926B2Publication Date: 2017-03-07
- Inventor: Shoji Sakaguchi
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JP2014-254931 20141217
- Main IPC: B23K26/00
- IPC: B23K26/00 ; H01L23/00 ; H01L25/065 ; H01L25/00

Abstract:
A method of manufacturing a semiconductor device that includes: preparing a pair of substrates that respectively include a device structure on one primary surface or another primary surface thereof; stacking the substrates so that said one primary surfaces face each other, exposing said another surfaces to the outside, and fixing entire peripheral outer edges of the substrates that have been stacked to each other; and thereafter, plating said exposed another primary surfaces of the stacked and fixed substrates.
Public/Granted literature
- US20160181224A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-06-23
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