A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate comprising a recess portion filled with a conductive material; a conductive trace overlying and contacting the conductive material; a conductive pillar disposed on the conductive trace and over the recess portion of the substrate; and a semiconductor chip disposed on the conductive pillar, wherein the conductive trace comprises a width WT and a thickness TT, the recess portion of the substrate comprises a width WR in the width direction of the conductive trace and a depth DR, and the ratio of WR to WT ranges from about 0.25 to about 1.8 and the ratio of DR to TT ranges from about 0.1 to about 3.