Memory device structure

Invention Grant

US09589918B2 Memory device structure 有权

Title translation: 存储器件结构

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Patent Title: Memory device structure
Patent Title (中): 存储器件结构
Application No.: US14877341

Application Date: 2015-10-07
Publication No.: US09589918B2

Publication Date: 2017-03-07
Inventor: John Moore , Joseph F. Brooks
Applicant: Ovonyx Memory Technology, LLC
Applicant Address: US VA Alexandria
Assignee: OVONYX MEMORY TECHNOLOGY, LLC
Current Assignee: OVONYX MEMORY TECHNOLOGY, LLC
Current Assignee Address: US VA Alexandria
Agency: Holland & Hart LLP
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L23/00 ; H01L27/24 ; H01L45/00 ; H01L23/522 ; H01L23/532

Abstract:

A memory device structure includes circuitry formed over a substrate and at least one insulating portion formed over said circuitry, each of which includes a plurality of openings. The memory device also includes a plurality of electrical connections formed in respective openings of the plurality of openings of the at least one insulating portion, at least one bond pad formed within at least one of the at least one insulating portion, and a cap formed over the at least one bond pad.

Abstract(Chinese):

存储器件结构包括形成在衬底上的电路和形成在所述电路上的至少一个绝缘部分，每个绝缘部分包括多个开口。存储装置还包括形成在至少一个绝缘部分的多个开口的相应开口中的多个电连接，形成在至少一个绝缘部分中的至少一个绝缘部分内的至少一个接合焊盘，以及形成在所述至少一个接合垫。

Public/Granted literature

US20160027748A1 METHOD OF FORMING A MEMORY DEVICE Public/Granted day:2016-01-28

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）