Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14333709Application Date: 2014-07-17
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Publication No.: US09589915B2Publication Date: 2017-03-07
- Inventor: Tsung-Yuan Yu , Hao-Yi Tsai , Chao-Wen Shih , Wen-Hsin Chan , Chen-Chih Hsieh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agent Chun-Ming Shih
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/60 ; H01L21/28 ; H01L23/58 ; H01L23/10 ; H01L23/552 ; H01L23/544 ; H01L21/56 ; H01L23/31 ; H01L23/522 ; H01L23/00 ; H01L23/525

Abstract:
A semiconductor device includes a substrate defined with a seal ring region and a circuit region, the substrate includes a seal ring structure and an integrated circuit structure, the seal ring structure is disposed in the seal ring region and includes a plurality of stacked conductive layers interconnected by a plurality of via layers, the integrated circuit structure is disposed in the circuit region and includes an active or a passive device; a metal pad disposed over the seal ring region and contacted with the seal ring structure; a passivation layer disposed over the substrate and covering the metal pad; a polymeric layer disposed over the passivation layer and the circuit region; and a molding disposed over the passivation layer and the polymeric layer, wherein the seal ring structure is covered by the molding.
Public/Granted literature
- US20160020181A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-01-21
Information query
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