Invention Grant
- Patent Title: Semiconductor device with bypass functionality and method thereof
- Patent Title (中): 具有旁路功能的半导体器件及其方法
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Application No.: US13767668Application Date: 2013-02-14
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Publication No.: US09589904B2Publication Date: 2017-03-07
- Inventor: Ralf Otremba
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/552 ; G05F3/02 ; H01L21/50 ; H01L23/34 ; H01L23/495 ; H01L23/36 ; H01L23/492 ; H01L23/62 ; H01L23/31
Abstract:
A device includes a semiconductor chip and a bypass layer electrically coupled to a contact region of the semiconductor chip. The bypass layer is configured to change from behaving as an insulator to behaving as a conductor in response to a condition of the semiconductor chip.
Public/Granted literature
- US20140225661A1 Semiconductor Device with Bypass Functionality and Method Thereof Public/Granted day:2014-08-14
Information query
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