Invention Grant
- Patent Title: Whole wafer edge seal
- Patent Title (中): 整片边缘密封
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Application No.: US14686904Application Date: 2015-04-15
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Publication No.: US09589895B2Publication Date: 2017-03-07
- Inventor: Gregory Bazan , Thomas F. Houghton
- Applicant: International Business Machines Corporation
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski Safran Cole & Calderon, P.C.
- Agent Yuanmin Cai; Andrew M. Calderon
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/06 ; H01L23/58 ; H01L21/4763 ; H01L21/44 ; H01L23/532 ; H01L21/02 ; H01L21/768 ; H01L23/00

Abstract:
The present invention relates generally to semiconductor devices and more particularly, to a structure and method of creating a non-permeable edge seal around a whole wafer. The edge seal may be located between an inner region of a wafer comprising product chips and an outer edge of the wafer. The edge seal may comprise a fillet region adjacent the inner region, and a dielectric extension adjacent the fillet region. The dielectric extension region may be impermeable to moisture and composed of a dielectric layer on the wafer and a capping layer on the dielectric layer. The fillet region may comprise a lower metal fillet directly on the wafer, a dielectric layer on the lower metal fillet, an upper metal fillet on the dielectric layer, and a capping layer on the upper metal fillet. The fillet region may be adjacent to and in contact with a permeable layer formed on the product region.
Public/Granted literature
- US20160307848A1 WHOLE WAFER EDGE SEAL Public/Granted day:2016-10-20
Information query
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