Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14879682Application Date: 2015-10-09
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Publication No.: US09589867B2Publication Date: 2017-03-07
- Inventor: Tetsuya Inaba
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2014-221328 20141030
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/492 ; H01L23/15 ; H01L23/538 ; H01L23/373 ; H01L25/07 ; H01L23/049 ; H01L23/24

Abstract:
A semiconductor device includes: a semiconductor element having a gate and source electrodes; an insulating substrate which is provided with an insulating plate, a first circuit plate and a second circuit plate, the first circuit plate provided in a main surface of the insulating plate to be electrically connected to the gate electrode, the second circuit plate provided in the main surface to surround the first circuit plate and to be electrically connected to the source electrode; a first terminal, being column-shaped and electrically and mechanically connected to the first circuit plate; and a second terminal which is provided with a cylindrical body portion and support portions, the body portion has a through hole into which the first terminal is inserted with a gap, the support portions disposed in end portions of the body portion and electrically and mechanically connected to the second circuit plate.
Public/Granted literature
- US20160126187A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-05-05
Information query
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