A method for manufacturing a semiconductor device is provided. The method includes a process of applying liquid to one surface of a support substrate; a process of warping the support substrate by a volume change due to a phase transition of the liquid by solidifying the liquid; a process of attaching a semiconductor substrate having a linear expansion coefficient different from that of the support substrate to the support substrate in a heated state; and a process of warping the support substrate due to a linear expansion coefficient difference between the semiconductor substrate and the support substrate by cooling the support substrate to which the semiconductor substrate is attached. A warping direction due to the phase transition is opposite to a warping direction due to the linear expansion coefficient difference.