Invention Grant
- Patent Title: Substrate processing apparatus
- Patent Title (中): 基板加工装置
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Application No.: US15066081Application Date: 2016-03-10
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Publication No.: US09589819B1Publication Date: 2017-03-07
- Inventor: Satoshi Takano
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC, INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC, INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2015-191269 20150929
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/687

Abstract:
A substrate processing apparatus includes a robot having: an end effector, a first link structure including a fixing portion having a front end to which the end effector is fixed, a support portion, and a first hole formed in the support portion, a second link structure including a second hole, and a shaft inserted into the first and second holes, the shaft including an upper end having a height equal to or smaller than a height of the substrate mounted on the end effector; a vacuum transfer chamber, wherein the robot is installed in the vacuum transfer chamber; at least one process chamber disposed adjacent to the vacuum transfer chamber and configured to thermally process the substrate transferred from the vacuum transfer chamber by the robot; a module including one or more process chambers; and a cooling mechanism installed above the first link structure or the shaft.
Public/Granted literature
- US20170092518A1 SUBSTRATE PROCESSING APPARATUS Public/Granted day:2017-03-30
Information query
IPC分类: