Invention Grant
- Patent Title: Fabrication method of semiconductor piece
- Patent Title (中): 半导体片的制作方法
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Application No.: US14884168Application Date: 2015-10-15
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Publication No.: US09589812B2Publication Date: 2017-03-07
- Inventor: Mutsuya Takahashi , Shuichi Yamada , Michiaki Murata
- Applicant: FUJI XEROX CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: FUJI XEROX CO., LTD.
- Current Assignee: FUJI XEROX CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-225712 20141106; JP2014-237288 20141125; JP2015-127757 20150625
- Main IPC: H01L21/3065
- IPC: H01L21/3065 ; H01L21/304 ; H01L21/02 ; B81C1/00 ; H01L21/78 ; H01L21/683
Abstract:
A fabrication method of a semiconductor piece includes forming a groove that has a first groove portion, and a second groove portion which is a groove portion formed to communicate with a lower part of the first groove portion and extends toward a lower part at a steeper angle than an angle of the first groove portion, has a shape without an angle portion between the first groove portion and the second groove portion, is positioned on the front side, and is formed by dry etching; affixing a retention member including an adhesive layer to the surface in which the groove on the front side is formed; thinning the substrate from the back side of the substrate in a state in which the retention member is affixed; and removing the retention member from the surface after the thinning.
Public/Granted literature
- US20160133476A1 FABRICATION METHOD OF SEMICONDUCTOR PIECE Public/Granted day:2016-05-12
Information query
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