Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US13410994Application Date: 2012-03-02
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Publication No.: US09589771B2Publication Date: 2017-03-07
- Inventor: Yuki Hosaka , Naokazu Furuya , Mitsunori Ohata
- Applicant: Yuki Hosaka , Naokazu Furuya , Mitsunori Ohata
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Cantor Colburn LLP
- Priority: JP2011-046769 20110303
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; H01J37/32

Abstract:
Disclosed is a plasma processing apparatus capable of more accurately controlling plasma. The plasma processing apparatus includes a shower head provided within a processing chamber, in which a substrate accommodated therein is processed, to be faced to a mounting table for mounting the substrate and supply gas from a plurality of gas discharging holes provided on a facing surface that faces the mounting table toward a substrate in a shower pattern; a plurality of exhaust holes that passes through a surface located at an opposite side to the facing surface of the shower head; a circular plate-like body that is disposed parallel to the opposite surface in a exhaust space that communicates with the exhaust holes distributed at the opposite surface and made of a conductive material; and a moving unit configured to move the plate-like body to change a distance between the exhaust holes and the plate-like body.
Public/Granted literature
- US20120222814A1 PLASMA PROCESSING APPARATUS Public/Granted day:2012-09-06
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