Invention Grant
US09589663B2 OTP memory capable of performing multi-programming and semiconductor memory device including the same
有权
能够进行多编程的OTP存储器以及包含该程序的半导体存储器件
- Patent Title: OTP memory capable of performing multi-programming and semiconductor memory device including the same
- Patent Title (中): 能够进行多编程的OTP存储器以及包含该程序的半导体存储器件
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Application No.: US14962489Application Date: 2015-12-08
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Publication No.: US09589663B2Publication Date: 2017-03-07
- Inventor: Minyeol Ha
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2014-0180357 20141215
- Main IPC: G11C17/00
- IPC: G11C17/00 ; G11C17/18 ; G11C17/16 ; G11C29/00
Abstract:
A one-time programmable (OTP) memory capable of performing a multi-programming and a semiconductor memory device including the OTP memory are disclosed. The OTP memory includes a plurality of fuse cells in which two or more fuse cells are programmed at a time. In a program mode, in response to determining that a current flowing through each of the fuse cells increases to a predetermined value, the OTP memory blocks the current flowing through each of the fuse cells.
Public/Granted literature
- US20160172053A1 OTP MEMORY CAPABLE OF PERFORMING MULTI-PROGRAMMING AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2016-06-16
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