Invention Grant
- Patent Title: Resistive memory device with variable cell current amplification
- Patent Title (中): 具有可变电池电流放大的电阻式存储器件
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Application No.: US14486441Application Date: 2014-09-15
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Publication No.: US09589662B2Publication Date: 2017-03-07
- Inventor: Yeon-Uk Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0040558 20140404
- Main IPC: G11C17/18
- IPC: G11C17/18 ; G11C17/16
Abstract:
A resistive memory device includes a resistive memory cell whose resistance value varies based on a logic value of data stored therein, a current amplification block suitable for amplifying a current flowing through the resistive memory cell by N times, where N is a natural number greater than 1, and a sensing block suitable for sensing the data based on the amplified current.
Public/Granted literature
- US20150287473A1 RESISTIVE MEMORY DEVICE Public/Granted day:2015-10-08
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