Invention Grant
- Patent Title: Multiple FET non-volatile memory with default logical state
- Patent Title (中): 具有默认逻辑状态的多个FET非易失性存储器
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Application No.: US14932142Application Date: 2015-11-04
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Publication No.: US09589639B1Publication Date: 2017-03-07
- Inventor: Karl R. Erickson , Robert E. Kilker , Phil C. Paone , David P. Paulsen , John E. Sheets, II , Gregory J. Uhlmann
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Heather S. Chatterton
- Main IPC: G11C17/12
- IPC: G11C17/12 ; G11C16/04 ; H01L27/115 ; G11C16/26 ; G11C16/10 ; G11C5/06 ; H01L27/105 ; H01L27/112

Abstract:
A memory array has a NVM element with a plurality of FETs. A first set of FETs of the plurality of FETs is coupled to a bitline true of the memory array. The first set of FETs has a first channel width. A second set of FETs of the plurality of FETs is coupled to a bitline complement of the memory array. The second set of FETs has a second channel width. The first channel width is greater than the second channel width. The channel width disparity provides the NVM element of the unprogrammed memory array with a default state.
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