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US09589639B1 Multiple FET non-volatile memory with default logical state 有权
具有默认逻辑状态的多个FET非易失性存储器

Multiple FET non-volatile memory with default logical state
Abstract:
A memory array has a NVM element with a plurality of FETs. A first set of FETs of the plurality of FETs is coupled to a bitline true of the memory array. The first set of FETs has a first channel width. A second set of FETs of the plurality of FETs is coupled to a bitline complement of the memory array. The second set of FETs has a second channel width. The first channel width is greater than the second channel width. The channel width disparity provides the NVM element of the unprogrammed memory array with a default state.
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