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Invention Grant
US09589632B2 Resistive memory device including column decoder and method of performing a bidirectional driving operation and providing appropriate biasing with respect to bit lines 有权
电阻式存储器件包括列译码器和执行双向驱动操作并提供相对于位线的适当偏置的方法

Resistive memory device including column decoder and method of performing a bidirectional driving operation and providing appropriate biasing with respect to bit lines
Abstract:
A resistive memory device includes a column decoder having a first switch unit, including at least one pair of switches arranged in correspondence to each of a plurality of signal lines, and a second switch unit including a pair of switches arranged in correspondence to the at least one pair of switches of the first switch unit. A first pair of switches of the first switch unit includes a first switch and a second switch that are of the same type, and a second pair of switches of the second switch unit includes a third switch and a fourth switch that are connected to the first pair of switches. A selection voltage is provided to the first signal line by passing through the first switch, and an inhibit voltage is provided to the first signal line by selectively passing through the first switch or the second switch.
Abstract(Chinese):

一种电阻式存储装置，包括具有第一开关单元的列解码器，该第一开关单元包括对应于多条信号线中的每一条布置的至少一对开关，以及第二开关单元，该第二开关单元包括对应于至少 第一开关单元的一对开关。 第一开关单元的第一对开关包括相同类型的第一开关和第二开关，第二开关单元的第二对开关包括第三开关和第四开关，第三开关和第四开关连接到第一开关 一对开关 通过穿过第一开关将选择电压提供给第一信号线，并且通过选择性地通过第一开关或第二开关将第一信号线提供禁止电压。

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