Invention Grant
- Patent Title: Ultrafast quench based nonvolatile bistable device
- Patent Title (中): 超快淬火非挥发性双稳态器件
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Application No.: US14648902Application Date: 2013-09-30
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Publication No.: US09589631B2Publication Date: 2017-03-07
- Inventor: Ljupka Stojcevska , Tomaz Mertelj , Igor Vaskivskyi , Dragan Mihailovic
- Applicant: Institut Jozef Stefan , Center Odlicnosti Nanoznanosti In Nanotehnologije—Co Nanocenter
- Applicant Address: SI
- Assignee: Institut “Jozef Stefan”
- Current Assignee: Institut “Jozef Stefan”
- Current Assignee Address: SI
- Agency: The Watson I.P. Group, PLC
- Agent Jovan N. Jovanovic; Vladan M. Vasiljevic
- Priority: SI201200364 20121130
- International Application: PCT/SI2013/000056 WO 20130930
- International Announcement: WO2014/084799 WO 20140605
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C13/04 ; G11B7/0045 ; G11B9/04 ; G11B11/08 ; G11B7/2433 ; G11B7/243

Abstract:
The invention refers to an ultrafast quench based nonvolatile bistable device which consists of an active material on a passive or active substrate which changes its physical properties, after exposure to a sufficiently temporally short external perturbation causing an ultrafast quench. The perturbation can be from an external ultrashort laser pulse or ultrafast electrical pulse from an electrooptic device or any other generator of ultrashort pulses. This change of the materials properties can be detected as a change of optical properties or electrical resistance. The dielectric properties can be reverted back to their original state by the application of a heat pulse applied by an electrical heater within the device or an external laser.
Public/Granted literature
- US20150340089A1 Ultrafast Nonvolatile Memory Public/Granted day:2015-11-26
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