Invention Grant
US09589610B1 Memory circuit including pre-charging unit, sensing unit, and sink unit and method for operating same
有权
存储电路包括预充电单元，感测单元和接收单元及其操作方法
- Patent Title: Memory circuit including pre-charging unit, sensing unit, and sink unit and method for operating same
- Patent Title (中): 存储电路包括预充电单元，感测单元和接收单元及其操作方法
-
Application No.: US14845661Application Date: 2015-09-04
-
Publication No.: US09589610B1Publication Date: 2017-03-07
- Inventor: Chung-Kuang Chen
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/12
Abstract:
A memory circuit includes a pre-charging unit configured to charge a metal bit line during a pre-charging period, a sensing unit configured to sense a status of a memory cell coupled to the metal bit line during the pre-charging period, and a sink circuit configured to provide a sink current during the pre-charging period based on the status of the memory cell sensed by the sensing unit.
Public/Granted literature
- US20170069360A1 MEMORY CIRCUIT INCLUDING PRE-CHARGING UNIT, SENSING UNIT, AND SINK UNIT AND METHOD FOR OPERATING SAME Public/Granted day:2017-03-09
Information query
