Invention Grant
US09589599B2 Temperature compensated semiconductor device 有权
温度补偿半导体器件

  • Patent Title: Temperature compensated semiconductor device
  • Patent Title (中): 温度补偿半导体器件
  • Application No.: US14812852
    Application Date: 2015-07-29
  • Publication No.: US09589599B2
    Publication Date: 2017-03-07
  • Inventor: Won-Sun Park
  • Applicant: Sk hynix Inc.
  • Applicant Address: KR Gyeonggi-do
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2015-0050904 20150410
  • Main IPC: G11C7/04
  • IPC: G11C7/04
Temperature compensated semiconductor device
Abstract:
An integrated circuit includes a first signal generation unit suitable for generating a first enable signal which is activated during an initial setting period; a second signal generation unit suitable for generating a second enable signal which is activated in response to a command for performing a preset operation, after the initial setting period; and a temperature code generation unit suitable for generating temperature codes in response to activation of the first and second enable signals.
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