Invention Grant
- Patent Title: Temperature compensated semiconductor device
- Patent Title (中): 温度补偿半导体器件
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Application No.: US14812852Application Date: 2015-07-29
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Publication No.: US09589599B2Publication Date: 2017-03-07
- Inventor: Won-Sun Park
- Applicant: Sk hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2015-0050904 20150410
- Main IPC: G11C7/04
- IPC: G11C7/04

Abstract:
An integrated circuit includes a first signal generation unit suitable for generating a first enable signal which is activated during an initial setting period; a second signal generation unit suitable for generating a second enable signal which is activated in response to a command for performing a preset operation, after the initial setting period; and a temperature code generation unit suitable for generating temperature codes in response to activation of the first and second enable signals.
Public/Granted literature
- US20160301390A1 INTEGRATED CIRCUIT Public/Granted day:2016-10-13
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