A fault-tolerance through silicon via (TSV) interface is disposed in a three-dimensional random access memory (3-D RAM) with N memory layers and M data access path sets, and each of the memory layers containing K memory arrays, and each of the data access path sets containing a plurality of TSV paths connecting to the memory layers. The fault-tolerance TSV interface includes a path controlling unit and a processing unit. The path controlling unit detects and controls the data access path sets. When a fault occurs in any data access path set connecting to a memory layer, the processing unit provides at least two different fault-tolerance access configurations. In each of the fault-tolerance access configurations, μ data access path sets are enabled to access all K memory arrays in the corresponding memory layer, where 0