Invention Grant
US09588701B2 Multi-stage programming at a storage device using multiple instructions from a host
有权
使用来自主机的多个指令的存储设备进行多级编程
- Patent Title: Multi-stage programming at a storage device using multiple instructions from a host
- Patent Title (中): 使用来自主机的多个指令的存储设备进行多级编程
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Application No.: US14481308Application Date: 2014-09-09
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Publication No.: US09588701B2Publication Date: 2017-03-07
- Inventor: Amir Shaharabany , Hadas Oshinsky
- Applicant: SANDISK TECHNOLOGIES INC.
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Toler Law Group, PC
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
A method performed by a data storage device includes receiving, from a host device, a first instruction of a first set of instructions to write a first group of pages of data to a memory of the data storage device and receiving a second instruction of the first set of instructions to write the first group of pages of data. A first stage of a multi-stage programming operation is performed at a first physical address of the memory using a first copy of the first group of pages, and a second stage of the multi-stage programming operation is performed at the first physical address of the memory using a second copy of the first group of pages. The first copy and the second copy are received from the host device in association with the first instruction and the second instruction, respectively.
Public/Granted literature
- US20160070488A1 MULTI-STAGE PROGRAMMING AT A STORAGE DEVICE USING MULTIPLE INSTRUCTIONS FROM A HOST Public/Granted day:2016-03-10
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