Invention Grant
- Patent Title: Memory access bases on erase cycle time
- Patent Title (中): 存储器访问基于擦除周期时间
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Application No.: US14199837Application Date: 2014-03-06
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Publication No.: US09588695B2Publication Date: 2017-03-07
- Inventor: Mee-Choo Ong , Wei-Kent Ong , Ogiwara Yuusuke , Sie-Wei Henry Lau
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA San Jose
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06

Abstract:
Disclosed herein are system, apparatus, article of manufacture, method and/or computer program product embodiments for improving a read margin in non-volatile semiconductor memory device. An embodiment includes measuring an erase-time of a memory block in a memory device and associating an indicator from the plurality of indicators for the memory block. The indicator is saved and later retrieved during a read operation.
Public/Granted literature
- US20150253988A1 Memory Access Bases on Erase Cycle Time Public/Granted day:2015-09-10
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