Invention Grant
US09588695B2 Memory access bases on erase cycle time 有权
存储器访问基于擦除周期时间

Memory access bases on erase cycle time
Abstract:
Disclosed herein are system, apparatus, article of manufacture, method and/or computer program product embodiments for improving a read margin in non-volatile semiconductor memory device. An embodiment includes measuring an erase-time of a memory block in a memory device and associating an indicator from the plurality of indicators for the memory block. The indicator is saved and later retrieved during a read operation.
Public/Granted literature
Information query
Patent Agency Ranking
0/0