Invention Grant
US09588419B2 Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof
有权
极紫外光（EUV）光掩模及其制造方法
- Patent Title: Extreme ultraviolet light (EUV) photomasks and fabrication methods thereof
- Patent Title (中): 极紫外光（EUV）光掩模及其制造方法
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Application No.: US14810197Application Date: 2015-07-27
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Publication No.: US09588419B2Publication Date: 2017-03-07
- Inventor: Yen-Cheng Lu , Chih-Tsung Shih , Shinn-Sheng Yu , Jeng-Horng Chen , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/24 ; G03F1/80 ; G03F1/52
Abstract:
Embodiments of EUV photomasks and methods for forming a EUV photomask are provided. The method comprises providing a substrate, a reflective layer, a capping layer, a hard mask layer, and forming an opening therein. An absorber layer is then filled in the opening and over the top surface of the hard mask layer. A removing process is provided to form an absorber with a top surface lower than a top surface of the capping layer.
Public/Granted literature
- US20150331307A1 Extreme Ultraviolet Light (EUV) Photomasks and Fabrication Methods Thereof Public/Granted day:2015-11-19
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