Invention Grant
- Patent Title: Pattern forming method
- Patent Title (中): 图案形成方法
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Application No.: US14571385Application Date: 2014-12-16
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Publication No.: US09588418B2Publication Date: 2017-03-07
- Inventor: Naomi Shida , Kenji Todori , Shigehiko Mori , Reiko Yoshimura , Hiroyuki Kashiwagi , Ikuo Yoneda , Tsukasa Tada
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-081893 20120330
- Main IPC: G03F1/38
- IPC: G03F1/38 ; G03F7/20 ; G03F1/76 ; G03F1/80

Abstract:
A near-field exposure mask according to an embodiment includes: a substrate; a concave-convex structure having convexities and concavities and formed on one surface of the substrate; a near-field light generating film arranged at least on a tip portion of each of the convexities, the near-field light generating film being a layer containing at least one element selected from the group consisting of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a film stack formed with layers made of some of those materials; and a resin filled in each of the concavities.
Public/Granted literature
- US20150168825A1 NEAR-FIELD EXPOSURE MASK AND PATTERN FORMING METHOD Public/Granted day:2015-06-18
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