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US09587932B2 System for directly measuring the depth of a high aspect ratio etched feature on a wafer 有权
用于直接测量晶片上的高纵横比蚀刻特征的深度的系统

System for directly measuring the depth of a high aspect ratio etched feature on a wafer
Abstract:
A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).
Abstract(Chinese):

一种用于直接测量包括蚀刻表面（82）和非蚀刻表面（84）的晶片（80）上的高纵横比蚀刻特征的深度的系统（10）。 系统（10）利用红外反射计（12），在优选实施例中，扫描激光器（14），光纤循环器（16），光电检测器（22）和组合准直仪（18）和物镜（20） ）。 从物镜（20），产生被施加到晶片（80）的未蚀刻表面（84）的聚焦入射光（23）。 从晶片（80）产生的反射光（25）通过反射计（12）处理并被施加到产生相应的数字数据信号（29）的ADC（24）。 数字数据信号（29）被应用于与软件（32）组合的计算机（30），其测量在显示器（34）上被观看的蚀刻特征的深度。

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