Invention Grant
- Patent Title: Apparatus for low power high speed integrated clock gating cell
- Patent Title (中): 低功耗高速集成时钟门控单元的设备
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Application No.: US15013659Application Date: 2016-02-02
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Publication No.: US09564897B1Publication Date: 2017-02-07
- Inventor: Matthew Berzins , James Jung Lim
- Applicant: Matthew Berzins , James Jung Lim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR
- Agency: The Farrell Law Firm, P.C.
- Main IPC: H03K19/00
- IPC: H03K19/00 ; H03K3/03 ; H03K3/012 ; H03K3/037 ; H03K3/356 ; H03K17/30

Abstract:
An apparatus for an integrated clock gating cell is provided. The apparatus includes a logic gate that receives an unbuffered enable signal (E), a scan test enable signal (SE), and outputs an inverted enable signal (EN); a first transmission gate that receives E, SE, and EN; a second transmission gate that is connected to the first transmission gate and receives a clock signal (CK) and an enabled and inverted clock signal (ECKN); a first transistor having terminals connected to a power supply voltage (VDD), an output of the logic gate, and the first transmission gate respectively; a second transistor including terminals connected to the first transmission gate and VDD respectively; and a latch including terminals connected to the second transmission gate and the second transistor respectively.
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